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Proceedings Paper

Optimized processes and absorber-stack materials for EUV masks
Author(s): Josef Mathuni; Jenspeter Rau; Frank-Michael Kamm; Guenther G. Ruhl; Ch. Holfeld; Florian Letzkus; C. Koepernik; Joerg Butschke
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Paper Abstract

Currently, EUV lithography targets for sub-50 nm features. These very small feature sizes are used for reflective illumination and impose great challenges to the mask maker since they do not allow a simple downscaling of existing technologies. New material combinations for absorber and buffer layer of EUV masks have to be evaluated and fundamental material limits have to be overcome. We report on optimized absorber-stack materials and compare in particular the performance of chrome and tantalum nitride for such small nodes. Tantalum nitride shows similar or even better properties than standard chrome, above all with respect to etch bias. Further investigations have to be done but this material is a promising candidate for feature sizes in the sub-50 nm range.

Paper Details

Date Published: 2 June 2004
PDF: 6 pages
Proc. SPIE 5504, 20th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (2 June 2004); doi: 10.1117/12.568010
Show Author Affiliations
Josef Mathuni, Infineon Technologies AG (Germany)
Jenspeter Rau, Infineon Technologies AG (Germany)
Frank-Michael Kamm, Infineon Technologies AG (Germany)
Guenther G. Ruhl, Infineon Technologies AG (Germany)
Ch. Holfeld, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Florian Letzkus, Institut für Mikroelektronik Stuttgart (Germany)
C. Koepernik, Institut fur Mikroelektronik Stuttgart (Germany)
Joerg Butschke, Institut fur Mikroelektronik Stuttgart (Germany)

Published in SPIE Proceedings Vol. 5504:
20th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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