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Proceedings Paper

Terahertz emission from surface optical rectification in n-InAs
Author(s): M. Reid; R. Fedosejevs
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Paper Abstract

Terahertz emission from n-type (100), (110) and (111) InAs crystals have been measured as a function of the sample orientation. Emission was excited using 120 fs Ti:Sapphire laser pulses at an incident angle of 45° with fluences of approximately 1-2mJ/cm2. The data is shown to match the behavior expected for optical rectification at the surface, with small contributions from bulk optical rectification and photo-carrier diffusion. Thus, at fluences employed in the present study, it appears that the dominant mechanism for generating THz radiation is optical rectification at the surface.

Paper Details

Date Published: 20 December 2004
PDF: 11 pages
Proc. SPIE 5577, Photonics North 2004: Optical Components and Devices, (20 December 2004); doi: 10.1117/12.567332
Show Author Affiliations
M. Reid, Univ. of Alberta (Canada)
R. Fedosejevs, Univ. of Alberta (Canada)

Published in SPIE Proceedings Vol. 5577:
Photonics North 2004: Optical Components and Devices
John C. Armitage; Simon Fafard; Roger A. Lessard; George A. Lampropoulos, Editor(s)

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