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Proceedings Paper

Chemically modified ultrathin oxides fabricated by rapid thermal processing
Author(s): Atul B. Joshi; G. Q. Lo; J. Ahn; Windsor Ting M.D.; Dim-Lee Kwong
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Paper Abstract

A comprehensive review of chemical composition and electrical properties is presented for thin gate oxides with small amounts of nitrogen or fluorine, incorporated by rapid thermal processing. Electrical properties of these chemically modified oxides are correlated with the changes in chemical composition and the resulting structural modifications. Qualitative models described in some of the earlier works are used to establish these correlations. It is concluded that the changes in chemical composition of Si02 can be controlled to realize superior gate dielectrics for application in ULSI MOS devices.

Paper Details

Date Published: 1 February 1992
PDF: 18 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56674
Show Author Affiliations
Atul B. Joshi, Univ. of Texas/Austin (United States)
G. Q. Lo, Univ. of Texas/Austin (United States)
J. Ahn, Univ. of Texas/Austin (United States)
Windsor Ting M.D., Univ. of Texas/ Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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