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Proceedings Paper

Oxidation of hydrogen silsesquioxane, (HSiO3/2)n, by rapid thermal processing
Author(s): Theresa E. Gentle
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Paper Abstract

At Dow Corning Corporation, hydrogen silsesquioxane, (HSi03/2)n. is being commercialized as a precursor to silica coatings for applications in the protection of electronic devices and as an interlayer dielectric layer in the fabrication of integrated circuits. Rapid Thermal Processing (RTP) has been used to convert hydrogen silsesquioxane to silica at temperatures as low as 400 °C with minimal to no adverse effects to temperature sensitive integrated circuits. The resulting silica films had lower mechanical stress and better chemical homogeneity than films processed in a conventional furnace using the same precursor and temperatures. Two different RTP units, one employing an arc lamp and the other with tungsten-halogen lamps, gave comparable results.

Paper Details

Date Published: 1 February 1992
PDF: 19 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56672
Show Author Affiliations
Theresa E. Gentle, Dow Corning Corp. (United States)

Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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