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Proceedings Paper

Epitaxial growth and processing of Si1-xGex/Si for heterojunction bipolar transistors using rapid thermal techniques
Author(s): Judy L. Hoyt; T. Ghani; D. B. Noble; James F. Gibbons
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Paper Abstract

Processing and materials issues for the fabrication of Si/Sii_Ge/Si heterojunction bipolar transistors (HBTs) are discussed, particularly as they relate to the use of rapid thermal processing techniques. The addition of Ge to the base of the bipolar transistor provides the ability to tailor the bandgap throughout the device for optimum performance. However, these devices pose several challenging process integration issues. The sensitivity of device performance to temperature-time exposure originates from fundamental processes such as islanding during growth and annealing, impurity incorporation in Sii_Ge, dopant diffusion in and from Sii_Ge layers, and the formation of misfit dislocations. Each of these issues sets constraints on processing variables such as temperature, time, and ambient purity, and on device design parameters such as Ge and dopant depth profiles. Rapid thermal processing techniques may offer advantages in several of these areas.

Paper Details

Date Published: 1 February 1992
PDF: 12 pages
Proc. SPIE 1595, Rapid Thermal and Integrated Processing, (1 February 1992); doi: 10.1117/12.56666
Show Author Affiliations
Judy L. Hoyt, Stanford Univ. (United States)
T. Ghani, Stanford Univ. (United States)
D. B. Noble, Stanford Univ. (United States)
James F. Gibbons, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 1595:
Rapid Thermal and Integrated Processing
Mehrdad M. Moslehi; Rajendra Singh; Dim-Lee Kwong, Editor(s)

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