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Proceedings Paper

In-situ film thickness measurements for real-time monitoring and control of advanced photoresist track coating systems
Author(s): Thomas E. Metz; Richard N. Savage; Horace O. Simmons
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Paper Abstract

This paper will explore the methodologies of real-time measurement of photoresist film thickness on silicon wafers using multi-wavelength reflection interferometry. Reflected light from the wafer’s surface, containing the interference profile, is collected in-situ via a fiber optic cable and film thickness is determined in real-time via a pattern recognition algorithm. The instrumentation used to make this measurement and its application towards optimizing track performance during spin-coating and bake will be discussed. Data demonstrating basic thickness versus spin-time and thickness versus bake-time profiles acquired on-line without process disruption will be presented along with its utilization towards minimizing process set-up and machine qualification. Moreover, the advantages of characterizing film thickness on-line and in real-time will be reviewed.

Paper Details

Date Published: 1 January 1992
PDF: 7 pages
Proc. SPIE 1594, Process Module Metrology, Control and Clustering, (1 January 1992); doi: 10.1117/12.56629
Show Author Affiliations
Thomas E. Metz, SC Technology, Inc. (United States)
Richard N. Savage, SC Technology, Inc. (United States)
Horace O. Simmons, SC Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 1594:
Process Module Metrology, Control and Clustering
Cecil J. Davis; Irving P. Herman; Terry R. Turner, Editor(s)

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