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Proceedings Paper

Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep-level transient spectroscopy
Author(s): Gaudenzio Meneghesso; Matteo Meneghini; Simone Levada; Enrico Zanoni; Anna D. M. Cavallini; Antonio Castaldini; Volker Harle; Thomas Zahner; Ulrich Zehnder
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Paper Abstract

In this paper we present a combined current-voltage, capacitance-voltage, Deep Level Transient Spectroscopy and electroluminescence study of short-term instabilities of InGaN/GaN LEDs submitted to forward current aging tests at room temperature. In the early stages of the aging tests at low forward current levels (15-20 mA), LEDs present a decrease in optical power, which stabilizes within the first 50 hours and never exceeds 10% (measured at 20 mA). The spectral distribution of the electroluminescence intensity does not change with stress, while C-V profiles detect changes consisting in apparent doping and/or charge concentration increase within quantum wells. This increase is correlated with the decrease in optical power. Capacitance Deep Level Transient Spectroscopy has been carried out to clarify the DC aging induced generation/modification of the energy levels present in the devices. Remarkable changes occur after the stress, which can be related to the doping/charge variation and thus to the efficiency loss.

Paper Details

Date Published: 20 October 2004
PDF: 9 pages
Proc. SPIE 5530, Fourth International Conference on Solid State Lighting, (20 October 2004); doi: 10.1117/12.566159
Show Author Affiliations
Gaudenzio Meneghesso, Univ. degli Studi di Padova (Italy)
Matteo Meneghini, Univ. degli Studi di Padova (Italy)
Simone Levada, Univ. degli Studi di Padova (Italy)
Enrico Zanoni, Univ. degli Studi di Padova (Italy)
Anna D. M. Cavallini, Univ. di Bologna (Italy)
Antonio Castaldini, Univ. di Bologna (Italy)
Volker Harle, OSRAM Opto Semiconductors GmbH (Germany)
Thomas Zahner, OSRAM Opto Semiconductors GmbH (Germany)
Ulrich Zehnder, OSRAM Opto Semiconductors GmbH (Germany)

Published in SPIE Proceedings Vol. 5530:
Fourth International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Steven P. DenBaars; John C. Carrano, Editor(s)

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