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Proceedings Paper

Bevelled-sidewalls formation and its effect on the light output of GaInN MQW LED chips
Author(s): Jung Tsung Hsu; C. S. Huang; W. Y. Yeh; Jenq Dar Tsay; Y. D. Guo; Chang Cheng Chuo; Chun Yu Lin; Ching Cherng Sun; S. M. Pan
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Paper Abstract

In this research, experiments and optical simulations have been carried out to study the effect of bevelled sidewalls and geometric shapes on the light extraction efficiency of GaN LED chips. Besides the conventional rectangular chips, hexagonal LED chips were experimentally processed for the fist time on a novel island-like GaN substrate. The bevelled sidewalls could be naturally formed on the chips during the growth of GaN islands by HVPE technology. The results of simulations and experiments are consistent with each other, and show that the output power of LED will be improved doubly when the sidewalls were beveled on the chip. The light output from hexagonal LED chips is also proved better than that from conventional rectangular chips.

Paper Details

Date Published: 20 October 2004
PDF: 7 pages
Proc. SPIE 5530, Fourth International Conference on Solid State Lighting, (20 October 2004); doi: 10.1117/12.565339
Show Author Affiliations
Jung Tsung Hsu, Industrial Technology Research Institute (Taiwan)
C. S. Huang, Industrial Technology Research Institute (Taiwan)
W. Y. Yeh, Industrial Technology Research Institute (Taiwan)
Jenq Dar Tsay, Industrial Technology Research Institute (Taiwan)
Y. D. Guo, Industrial Technology Research Institute (Taiwan)
Chang Cheng Chuo, Industrial Technology Research Institute (Taiwan)
Chun Yu Lin, National Central Univ. (Taiwan)
Ching Cherng Sun, National Central Univ. (Taiwan)
S. M. Pan, Formosa Epitaxy Inc. (Taiwan)

Published in SPIE Proceedings Vol. 5530:
Fourth International Conference on Solid State Lighting
Ian T. Ferguson; Nadarajah Narendran; Steven P. DenBaars; John C. Carrano, Editor(s)

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