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Proceedings Paper

Oxygen impurities in epitaxial silicon grown on Czochralski substrates: recent advances by micro-FTIR spectroscopy
Author(s): M. Geddo; B. Pivac; Angiolino Stella
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Paper Abstract

The interstitial oxygen profile across the epitaxial silicon and Czochralski silicon interface has been determined using a micro Fourier transform infrared technique. Systematic measurements performed in transversal wafer cross-section configuration demonstrate the presence of interstitial oxygen in the epitaxial layer, clearly indicating that solid state outdiffusion from the substrate occurs during film preparation. Moreover, it is shown that oxygen contamination may produce precipitation phenomena inside the film.

Paper Details

Date Published: 1 March 1992
PDF: 2 pages
Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); doi: 10.1117/12.56474
Show Author Affiliations
M. Geddo, Univ. di Pavia (Italy)
B. Pivac, Univ. di Pavia (Croatia)
Angiolino Stella, Univ. di Pavia (Italy)

Published in SPIE Proceedings Vol. 1575:
8th Intl Conf on Fourier Transform Spectroscopy
Herbert Michael Heise; Ernst Heiner Korte; Heinz W. Siesler, Editor(s)

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