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Proceedings Paper

Large-format IRFPA development on silicon
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Paper Abstract

High performance large-format Infrared Focal Plane Arrays are required for Third Generation Infrared Imaging technology. HgCdTe IRFPAs exhibit performances to meet this goal. Si-based composite substrates have proven to be the substrate of choice to realize high-resolution HgCdTe arrays. Composite substrate technology offers scalability, and wafer sizes as large as six-inches have been used with excellent compositional uniformity. Current state-of-the-art composite substrates exhibits dislocation density in low to mid 105 cm-2 range. The HgCdTe epitaxial layers on composite substrates, however, show a defect density in the low to mid 106 cm-2. Recent developments in CdSeTe/Si composite wafers show great promise for a better lattice matching to HgCdTe alloy, and it is envisioned that with further improvements in both, materials quality and device architecture, a HgCdTe based scalable technology is within our grasp.

Paper Details

Date Published: 22 October 2004
PDF: 10 pages
Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); doi: 10.1117/12.562812
Show Author Affiliations
Nibir K. Dhar, Army Research Lab. (United States)
Meimei Z. Tidrow, Missile Defense Agency (United States)

Published in SPIE Proceedings Vol. 5564:
Infrared Detector Materials and Devices
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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