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Proceedings Paper

Modeling diffusion of ion-implanted impurity in silicon under a temperature gradient
Author(s): Valery I. Rudakov; Vladimir V. Ovcharov; Alexander V. Bashmakov
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Paper Abstract

For description of the diffusion process in a temperature field at the constant temperature gradient in semi-infinite media from an extended source of infinite extent and an instantaneous plane source the simple formulae taking into account the temperature dependence of diffusion coefficient is proposed. The analytical solution of the equation describing thermodiffusion for same conditions for gaussian form source is given. Since in this solution the temperature dependence of diffusion coefficient is not taken account the limits of its applicability is examined.

Paper Details

Date Published: 28 May 2004
PDF: 7 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.562660
Show Author Affiliations
Valery I. Rudakov, Institute of Microelectronics and Informatics (Russia)
Vladimir V. Ovcharov, Institute of Microelectronics and Informatics (Russia)
Alexander V. Bashmakov, Institute of Microelectronics and Informatics (Russia)


Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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