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Proceedings Paper

Hybrid AAPSM compliance methodology to ensure design for manufacturing
Author(s): Vishnu G. Kamat; Alexander Miloslavsky; Vinod K. Malhotra; Jeffrey P. Mayhew; Michel L. Cote
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Paper Abstract

Dark field Alternating Aperture Phase Shift Mask (AAPSM) technology has developed into an enabling Resolution Enhancement Technology (RET) in the sub-100nm semiconductor device era. As phase shift masks are increasingly used to resolve features beyond just the most critical (for example transistor gates on the poly layer) the probability of phase conflicts (same phase across a feature) has increased tremendously. It has become imperative to introduce design practices that enable the semiconductor fabrication to take advantage of the improved performance that AAPSM delivers. In this paper we analyze the different causes for phase conflicts and the appropriate methods for detecting them, thus building the basis for the Hybrid AAPSM compliance flow. This approach leverages the strengths of existing DRC tools and the AAPSM conversion software. The approach is effective for minimizing the area penalty, thus very effective for density driven designs. By design, it is suited for custom or semi-custom layouts.

Paper Details

Date Published: 3 May 2004
PDF: 11 pages
Proc. SPIE 5379, Design and Process Integration for Microelectronic Manufacturing II, (3 May 2004); doi: 10.1117/12.561828
Show Author Affiliations
Vishnu G. Kamat, Invarium Inc. (United States)
Alexander Miloslavsky, Synopsys, Inc. (United States)
Vinod K. Malhotra, Synopsys, Inc. (United States)
Jeffrey P. Mayhew, Synopsys, Inc. (United States)
Michel L. Cote, Synopsys, Inc. (United States)

Published in SPIE Proceedings Vol. 5379:
Design and Process Integration for Microelectronic Manufacturing II
Lars W. Liebmann, Editor(s)

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