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Proceedings Paper

Thin film transistors and light-emitting diodes based on donor-acceptor-donor polymers
Author(s): Miao Xiang Chen; Erik Perzon; Mats R. Andersson; Magnus Bergrren
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Paper Abstract

We report on transistors and light-emitting diodes using a conjugated polymer consisting of alternated segments of fluorene units and low-band gap donor-acceptor-donor (D-A-D) units. The D-A-D segment includes two electron-donating thiophene rings combined with a thiadiazolo-quinoxaline unit, which is electron withdrawing to its nature. The resulting polymer is conjugated and has a band gap of around 1.27 eV. Here we present the corresponding electro- and photoluminescence spectra, which both peak at approximately 1 micrometer. Single layer light-emitting diodes demonstrated external quantum efficiencies from 0.03% to 0.05%. The polymer was employed as active material in thin film transistors, a field-effect mobility of 0.003 cm2/Vs and current on/off ratio of 104 were achieved at ambient atmosphere.

Paper Details

Date Published: 18 October 2004
PDF: 7 pages
Proc. SPIE 5522, Organic Field-Effect Transistors III, (18 October 2004); doi: 10.1117/12.561389
Show Author Affiliations
Miao Xiang Chen, Linkoping Univ. (Sweden)
Erik Perzon, Chalmers Univ. of Technology (Sweden)
Mats R. Andersson, Chalmers Univ. of Technology (Sweden)
Magnus Bergrren, Linkoping Univ. (Sweden)

Published in SPIE Proceedings Vol. 5522:
Organic Field-Effect Transistors III
Ananth Dodabalapur, Editor(s)

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