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Proceedings Paper

InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD
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Paper Abstract

Inter-subband detectors such as quantum well infrared photodetectors (QWIP) have been widely used in infrared remote sensing. Quantum dot infrared photodetectors (QDIPS) have been predicted to have better performanc than QWIPs due to the novel properties of quantum dots caused by the extra confinement. Here we report our recent results of InAs QDIP grown on InP substrate by low-pressure metalorganic chemical vapor deposition. The device structure consists of multiple stacks of InAs quantum dots with GaAs/AlInAs/InP barrier. 400μx400μm test mesas were fabricated for device characterizations. Photoresponse was observed with a peak wavelength of 6.4 μm and a cutoff wavelength of 6.6 μm at both 77K and 100K. A detectivity of 1.0x1010 cmHz1/2/W was obtained at 77K at a bias of -1.1. V. To the best of our knowledge, this is the highest detectivity reported for InAs QDIP grown on InP substrate. At 100K, the detectivity only drops to 2.3x109cmHz1/2/W.

Paper Details

Date Published: 4 November 2004
PDF: 9 pages
Proc. SPIE 5543, Infrared Spaceborne Remote Sensing XII, (4 November 2004); doi: 10.1117/12.561377
Show Author Affiliations
Wei Zhang, Northwestern Univ. (United States)
Hochul Lim, Northwestern Univ. (United States)
Stanley Tsao, Northwestern Univ. (United States)
Kan Mi, Northwestern Univ. (United States)
Bijan Movaghar, Northwestern Univ. (United States)
Thomas Sills, Northwestern Univ. (United States)
Jutao Jiang, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 5543:
Infrared Spaceborne Remote Sensing XII
Marija Strojnik, Editor(s)

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