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Proceedings Paper

Recent developement of terahertz wave generation
Author(s): Jun-Ichi Nishizawa
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Paper Abstract

History and recent developments of terahertz devices utilizing lattice and molecular vibrations are presented. They are semiconductor Raman oscillator and amplifier, parametric generators of terahertz wave using polariton-phonons in dielectrics and semiconductors. We also present the recent advancements in the fabrication and performance of terahertz electronics devices: ISIT and ZTUNNETT diode. They are fabricated with molecular layer epitaxy (MLE), which is the most advanced nanotechnology having atomic accuracy.

Paper Details

Date Published: 7 April 2004
PDF: 6 pages
Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.560679
Show Author Affiliations
Jun-Ichi Nishizawa, RIKEN (Japan)
Semiconductor Research Insititute (Japan)

Published in SPIE Proceedings Vol. 5445:
Microwave and Optical Technology 2003
Jaromir Pistora; Kamil Postava; Miroslav Hrabovsky; Banmali S. Rawat, Editor(s)

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