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Proceedings Paper

X-ray analysis of strain relaxation in multilayer systems InxGa1-xAS1-yNy/GaAs
Author(s): Markus Pessa; Emil-Mihai Pavelescu; Igor M. Fodchuk; V. B. Gevyk; A. P. Shpak; V. B. Molodkin; E. N. Kislovskii; S. I. Olikhovskii
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Paper Abstract

The multilayer nano-scale systems contained one or two quantum wells InxGa1-xAs1-yNy have been investigated by double-crystal X-ray diffractometry. The growth conditions, composition of initial compounds were considered. It is shown that the processes of interdiffusion of In and Ga atoms nearby the interfaces of layer with QW were took place and influenced on the properties of considered multilayer systems. The principle structural parameters of multilayered InxGa1-xAs1-yNy/GaAs systems and contents of nitrogen in the quantum well and buffer layers were estimated.

Paper Details

Date Published: 4 June 2004
PDF: 9 pages
Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); doi: 10.1117/12.560019
Show Author Affiliations
Markus Pessa, Tampere Univ. of Technology (Finland)
Emil-Mihai Pavelescu, Tampere Univ. of Technology (Finland)
Igor M. Fodchuk, Chernivtsi National Univ. (Ukraine)
V. B. Gevyk, Chernivtsi National Univ. (Ukraine)
A. P. Shpak, Institute of Metal Physics (Ukraine)
V. B. Molodkin, Institute of Metal Physics (Ukraine)
E. N. Kislovskii, Institute of Metal Physics (Ukraine)
S. I. Olikhovskii, Institute of Metal Physics (Ukraine)

Published in SPIE Proceedings Vol. 5477:
Sixth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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