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Proceedings Paper

Structural changes of silicon crystals after high-energy electron irradiation
Author(s): A. G. Gimchinsky; B. I. Gutsulyak; A. V. Oleynich-Lysyuk; N. D. Raransky; Z. Swiantek
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Paper Abstract

The secondary processes in monocrystalline Si before and after high-energy electron irradiation (about 18 MeV) and combined electron and gamma irradiation have been studied using the X-ray diffraction analysis and the method of internal friction in the infra-sound frequency range. It was shown that the irradiation influences on the degree of structural perfection of crystals and significantly deforms the infra-sound absorption spectrum and leads to an amplitude dependencies of the effective shear modulus (Gef) and to its temperature hysteresis. Presumptions about the nature of the observed phenomena were advanced.

Paper Details

Date Published: 4 June 2004
PDF: 7 pages
Proc. SPIE 5477, Sixth International Conference on Correlation Optics, (4 June 2004); doi: 10.1117/12.559884
Show Author Affiliations
A. G. Gimchinsky, Chernivtsi National Univ. (Ukraine)
B. I. Gutsulyak, Chernivtsi National Univ. (Ukraine)
A. V. Oleynich-Lysyuk, Chernivtsi National Univ. (Ukraine)
N. D. Raransky, Chernivtsi National Univ. (Ukraine)
Z. Swiantek, Institute of Metallurgy and Materials Science (Poland)

Published in SPIE Proceedings Vol. 5477:
Sixth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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