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Proceedings Paper

Investigation of transport mechanisms in a-SiGe:H/c-Si heterostructures
Author(s): Alexei A. Sherchenkov; Boris G. Budaguan; Alexander V. Mazurov
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Paper Abstract

The results of the investigation of the properties of a-SiGe:H/c-Si heterostructures fabricated by LF (55 kHz) PECVD are presented. Electrical model describing current-voltage characteristics of heterostructure in wide range of forward biases was developed. It was established that in a-SiGe:H/c-Si heterostructures the multitunnelling capture-emission mechanism prevails in low voltage range (U<1.0 V). At applied voltage higher than 1.5 V space charge limited current predominates. In the low reverse voltage range change of the transport mechanism was observed, which is connected with considerable decrease of band gap in amorphous alloy. In the high reverse voltage range ([U]>1.5 V) reverse current is controlled by the generation and recombination in depletion layer of a-SiGe:H.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558758
Show Author Affiliations
Alexei A. Sherchenkov, Moscow Institute of Electronic Technology (Russia)
Boris G. Budaguan, Moscow Institute of Electronic Technology (Russia)
Alexander V. Mazurov, Moscow Institute of Electronic Technology (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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