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Proceedings Paper

Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures
Author(s): Balint Podor; Gy. Kovacs; G. Remenyi; I. G. Savel'ev
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Paper Abstract

We report on temperature scaling experiments on the integer quantum Hall effect plateau-to-plateau transitions as well as on the i = 1 plateau-to-insulating phase transitions in two-dimensional electron gas in In0.53Ga0.47As/InP modulation-doped heterostructures. We have measured the longitudinal ρxx and Hall ρxy resistivities as a function of magnetic field in the temperature range 40 mK - 4.2 K. It was found that for both types of transitions the scaling exponent has the same value κ ≈ 0.6-0.7. The scaling exponent obtained in our experiments is significantly greater than κ = 0.42, the value generally considered to be universal.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558480
Show Author Affiliations
Balint Podor, Research Institute for Technical Physics and Material Science (Hungary)
Budapest Polytechnic Univ. (Hungary)
Gy. Kovacs, Eotvos Lorand Univ. (Hungary)
G. Remenyi, CNRS (France)
I. G. Savel'ev, A.F. Ioffe Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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