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Proceedings Paper

Spatially inhomogeneous effects at the interference of electron waves in semiconductor 1D nanostructures
Author(s): Victor A. Petrov; A. V. Nikitin
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Paper Abstract

Effects of spatial inhomogeneity for the probability current density jx (x, z) (or a quantum-mechanical current density ejx (x, z) e is the electron charge) in the semiconductor 1D nanostructures in the form of joints in the direction of propagation of the electron wave (the x-axis) of narrow and wide (on the z-axis) rectangular quantum wires (QWs) (z-axis is the axis of the quantization) have been theoretically studied. The inhomogeneous distribution of the jx (x, z) arises because of the interference of electron waves spreading in the wide QW simultaneously in different electron subbands. Special attention is given to effects of spatial reproduction and multiplication for electron waves in such nanostructures. It is shown that transverse distribution jx (0, z) existing at the entry of the wide QW is reproduced with some accuracy at a definite distance X1 from the joint and splits in symmetric (along the z-axis) 1D nanostructures into p identical profiles of the intensity lower by p times at the distance X1/p. This picture is reproduced periodically in cross-sections Xq = qX1 (q and p are integers). The results of numerical calculations of these effects in symmetric structures and their modification in asymmetric (on the z-axis) nanostructures are given.

Paper Details

Date Published: 28 May 2004
PDF: 9 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558476
Show Author Affiliations
Victor A. Petrov, Institute of Radio Engineering and Electronics (Russia)
A. V. Nikitin, Institute of Radio Engineering and Electronics (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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