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Proceedings Paper

AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)
Author(s): Zauri D. Chakhnakia; Levan V. Khvedelidze; Nina P. Khuchua; Revaz G. Melkadze; G. Peradze; Tatiana B. Sakharova; Z. Hatzopoulos
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Paper Abstract

Molecular-beam - grown epitaxy heterostructure field-effect transistors employing a delta-doped channel have been fabricated and investigated. The results of studies of DC parameters of δ-FET's of different configuration can be regarded as the best obtained by other authors for single δ-doped structures. These data as well as the results of modeling and simulation allow one to recommend the studied δ-FET's for digital and analog applications.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558432
Show Author Affiliations
Zauri D. Chakhnakia, Tbilisi State Univ. (Georgia)
Levan V. Khvedelidze, Tbilisi State Univ. (Georgia)
Nina P. Khuchua, Tbilisi State Univ. (Georgia)
Revaz G. Melkadze, Tbilisi State Univ. (Georgia)
G. Peradze, Tbilisi State Univ. (Georgia)
Tatiana B. Sakharova, Tbilisi State Univ. (Georgia)
Z. Hatzopoulos, Foundation for Research and Technology-Hellas (Greece)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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