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Proceedings Paper

Elaboration of gallium arsenide technology in Georgia for development of microelectronic devices
Author(s): Nina P. Khuchua; Zauri D. Chakhnakia; Levan V. Khvedelidze; Revaz G. Melkadze; Albert A. Tutunjan; Givi D. Kalandadzes; Nina A. Tutunjan; Roland Diehl
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Paper Abstract

Possibilities of gallium arsenide technology in Georgia to fabricate microelectronic devices are described. Characteristics of technological processes and parameters of active and passive components for digital and analog IC's are given. A concept of technology implementation with allowance for design, epistructure growth and processing is proposed which is the basis of a foundry service for application-specific microelectronic components.

Paper Details

Date Published: 28 May 2004
PDF: 10 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558416
Show Author Affiliations
Nina P. Khuchua, Tbilisi State Univ. (Georgia)
Zauri D. Chakhnakia, Tbilisi State Univ. (Georgia)
Levan V. Khvedelidze, Tbilisi State Univ. (Georgia)
Revaz G. Melkadze, Tbilisi State Univ. (Georgia)
Albert A. Tutunjan, Tbilisi State Univ. (Georgia)
Givi D. Kalandadzes, Tbilisi State Univ. (Georgia)
Nina A. Tutunjan, Tbilisi State Univ. (Georgia)
Roland Diehl, III-V Electronics and Optoelectronics (Germany)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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