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Proceedings Paper

Measurement and modeling of high-performance lateral p-i-n photodetectors
Author(s): W. P. Giziewicz; Henry K.H. Choy; Clifton G. Fonstad Jr.; Sheila Prasad
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Paper Abstract

Laterial p-i-n photodiodes have been produced in a standard, unmodified commercial GaAs integrated circuit process (Vitesse Semiconductor Inc. HGaAs IV and V). The devices were modelled using the MEDICI simulation package, achieving a very good fit to both capacitance and DC light response measuremnts. The simulation recreated an interesting feature of the devices, wherein the detectors go from a low-performance to high-performance regime abruptly at a specific reverse bias. An analysis of the simulated behavior of the depletion region in the nominally intrinsic region of the device provided a partial answer to the physics behind this bias point. A second generation of devices of different geometries was fabricated and tested. The newer fabrication process showed a lower performance transition (~0.6 V) than the previous process (~4 V) for an identical layout geometry. Preliminary high-speed measurements of the newer devices are quite encouraging.

Paper Details

Date Published: 7 April 2004
PDF: 6 pages
Proc. SPIE 5445, Microwave and Optical Technology 2003, (7 April 2004); doi: 10.1117/12.558399
Show Author Affiliations
W. P. Giziewicz, Massachusetts Institute of Technology (United States)
Henry K.H. Choy, Massachusetts Institute of Technology (United States)
Clifton G. Fonstad Jr., Massachusetts Institute of Technology (United States)
Sheila Prasad, Northeastern Univ. (United States)

Published in SPIE Proceedings Vol. 5445:
Microwave and Optical Technology 2003
Jaromir Pistora; Kamil Postava; Miroslav Hrabovsky; Banmali S. Rawat, Editor(s)

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