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Proceedings Paper

Investigation of a nucleation stage of macropore formation in p-type silicon
Author(s): V. V. Starkov; Eugene Yu. Gavrilin; Anatoli F. Vyatkin
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Paper Abstract

In the present paper the peculiarities of nucleation stage of deep anodic etching of silicon are studied. The dependence of the depth of etching crater obtained for silicon samples of p-type conduction with different resistivity upon the regimes of anodic etching processes has been determined. On the basis of the experimental results obtained the “bottleneck” effect observed both at the first and second stages of pore growth is explained.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557921
Show Author Affiliations
V. V. Starkov, Institute of Microelectronics Technology (Russia)
Eugene Yu. Gavrilin, Institute of Microelectronics Technology (Russia)
Anatoli F. Vyatkin, Institute of Microelectronics Technology (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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