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Proceedings Paper

Optical and photoelectrical characterization of as-deposited and annealed PECVD polysilicon thin films
Author(s): A. V. Khomich; V. I. Kovalev; A. S. Vedeneev; A. G. Kazanskii; P. A. Forsh; Deyan He; X. Q. Wang; H. Mell; I. I. Vlasov; E. V. Zavedeev
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Paper Abstract

Raman and optical spectroscopy, conductivity and steady-state photoconductivity measurements, spectroscopic ellipsometry and atomic force microscopy (AFM) techniques were used to determine the properties of microcrystalline (μc-Si:H) and amorphous (a-Si:H) hydrogenated silicon films deposited at low temperatures by a conventional plasma-enhanced chemical vapour deposition (PECVD) reactors from silane-hydrogen mixtures. In order to gain insight into the mechanisms of transport and recombination in μc-Si:H films we study effect of isochronal annealing at 300-600° C on their properties.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557905
Show Author Affiliations
A. V. Khomich, Institute of Radio Engineering and Electronics (Russia)
V. I. Kovalev, Institute of Radio Engineering and Electronics (Russia)
A. S. Vedeneev, Institute of Radio Engineering and Electronics (Russia)
A. G. Kazanskii, M.V. Lomonosov Moscow State Univ. (Russia)
P. A. Forsh, M.V. Lomonosov Moscow State Univ. (Russia)
Deyan He, Lanzhou Univ. (China)
X. Q. Wang, Lanzhou Univ. (China)
H. Mell, Philipps-Univ. Marburg (Germany)
I. I. Vlasov, General Physics Institute (Russia)
E. V. Zavedeev, General Physics Institute (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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