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Proceedings Paper

Linearity improvement for CD metrology with deep UV microscope
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Paper Abstract

Linearity improvement for critical dimension (CD) measurement of a photomask by the simulation assist (SA) method with a deep-UV microscope is proposed. In the conventional method, if the measurement pattern is resolved insufficiently with a deep-UV microscope, the CD cannot maintain linearity to the actual pattern size. In the SA method, the insufficient resolution is canceled by the actual image and the simulated image, and therefore the CD can maintain linearity even if the pattern is resolved insufficiently. The experiment result indicates that the SA method improves CD linearity of the conventional method; furthermore, it improves repeatability of hole patterns.

Paper Details

Date Published: 20 August 2004
PDF: 6 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557812
Show Author Affiliations
Takeshi Yamane, Toshiba Corp. (Japan)
Takashi Hirano, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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