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Proceedings Paper

OPC development: variable CD-SEM bias through feature shape, feature density, and material composition
Author(s): Kirk Miller; Katsuhiro Matsuyama; Ingo Schmitz; Dean J. Dawson
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Paper Abstract

Development of OPC strategies, both model-based and rules-based, can be greatly accelerated by identifying and minimizing metrology bias during OPC iterations. The CD-SEM edge-detection algorithms best suited for precision on 90 nm and 65 nm node ground-rule structures often do not provide linear response across a wide range of line sizes, line-end gaps and other structures of interest during OPC refinement. To ensure that reliable metrology data is being fed into the OPC calculation engine, reference measurements that are independent of (a) feature size, (b) feature shape and (c) material composition must be made to optimize CD-SEM edge-detection for this application. We show the importance of on-line atomic force microscopy (AFM) measurements to improve CD-SEM measurements and speed turnaround of OPC model generation. Measurements are made on through-pitch and through-size lines and spaces, both after litho and after etch and compared with CD-SEM measurements.

Paper Details

Date Published: 20 August 2004
PDF: 8 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557810
Show Author Affiliations
Kirk Miller, Veeco Instruments, Inc. (United States)
Katsuhiro Matsuyama, Veeco Instruments, Inc. (United States)
Ingo Schmitz, Veeco Instruments, Inc. (United States)
Dean J. Dawson, Veeco Instruments, Inc. (United States)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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