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Proceedings Paper

Recent CD accuracy improvements for HL-7000M
Author(s): Zhigang Wang; Hidetoshi Satoh; Hiroyuki Ito; Yasunari Sohda; Hiroya Ohta; Hajime Kawano; Yasuhiro Kadowaki; Kazui Mizuno; Takashi Matsuzaka
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Paper Abstract

A new electron beam mask writer, HL-7000M, has been developed for mass production of 90 nm node photomask and, research and development of 65 nm node mask. A series of adjustments to improve CD accuracy provides us a novel systematic solution for VSB system optimization. By applying a novel constant-gain method for linearity adjustment, linearity range, for designed size ranging from 0.3 um to 1.0 um, has been improved to < 3 nm for line and space pattern, the maximum XY discrepancy is 2 nm. Both experimental and theoretical studies for shot-divided patterns, which are often generated in OPC pattern conversion, have been applied. By modification of the shift term in beam size correction, exposure results for such shot-divided patterns, for divided pattern size varied from 500 nm to 1 nm, are improved to be less than 5 nm in range.

Paper Details

Date Published: 20 August 2004
PDF: 12 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557807
Show Author Affiliations
Zhigang Wang, Hitachi High-Technologies Corp. (Japan)
Hidetoshi Satoh, Hitachi High-Technologies Corp. (Japan)
Hiroyuki Ito, Hitachi High-Technologies Corp. (Japan)
Yasunari Sohda, Hitachi, Ltd. (Japan)
Hiroya Ohta, Hitachi, Ltd. (Japan)
Hajime Kawano, Hitachi High-Technologies Corp. (Japan)
Yasuhiro Kadowaki, Hitachi High-Technologies Corp. (Japan)
Kazui Mizuno, Hitachi High-Technologies Corp. (Japan)
Takashi Matsuzaka, Hitachi High-Technologies Corp. (Japan)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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