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Proceedings Paper

Performance data on new tunable attenuating PSM for 193-nm and 157-nm lithography
Author(s): Hans W. Becker; Frank Schmidt; Frank Sobel; Markus Renno; Ute Buttgereit; Jay Chey; Marie Angelopoulos; Konrad Knapp; Gunter Hess
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Paper Abstract

A new phase shifting film system based on tantalum and silicon dioxide is presented. The tantalum film works as a transmission control layer and furthermore as an etch stop layer due to its good etch selectivity. The silicon dioxide phase control layer is tuned to 180° phase shift. Excellent laser stability and chemical durability were already shown. The two layer system can be easily tuned to various transmission values for three different lithography wavelengths. Transmission and phase shift uniformity fulfill already the final production specifications according to ITRS. An optimized deposition process yields excellent film surface roughness values equal to an uncoated substrate. Defect density could be significantly reduced recently. First SEM pictures of structured films show promising results.

Paper Details

Date Published: 20 August 2004
PDF: 8 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557798
Show Author Affiliations
Hans W. Becker, Schott Lithotec AG (Germany)
Frank Schmidt, Schott Lithotec AG (Germany)
Frank Sobel, Schott Lithotec AG (Germany)
Markus Renno, Schott Lithotec AG (Germany)
Ute Buttgereit, Schott Lithotec AG (Germany)
Jay Chey, IBM Thomas J. Watson Research Ctr. (United States)
Marie Angelopoulos, IBM Thomas J. Watson Research Ctr. (United States)
Konrad Knapp, Schott Lithotec AG (Germany)
Gunter Hess, Schott Lithotec AG (Germany)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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