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Proceedings Paper

Results from a new die-to-database reticle inspection platform
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Paper Abstract

A new DUV die-to-database high-resolution reticle defect inspection platform has been developed. This platform is designed to meet the 90nm through 65nm node 248/193nm lithography reticle qualification requirements of the IC industry. These design nodes typically include: COG layers, EPSM layers, and AltPSM layers, plus aggressive OPC which includes jogs, serifs, and SRAF (sub-resolution assist features). The architecture and technology of the new inspection platform is described. Die-to-database inspection results are shown on standard programmed defect test reticles, as well as, advanced 90nm through 65nm node reticles from industry sources. Results show high sensitivity and low false detections being achieved.

Paper Details

Date Published: 20 August 2004
PDF: 14 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557784
Show Author Affiliations
William H. Broadbent, KLA-Tencor Corp. (United States)
James N. Wiley, KLA-Tencor Corp. (United States)
Zain K. Saidin, KLA-Tencor Corp. (United States)
Sterling G. Watson, KLA-Tencor Corp. (United States)
David S. Alles, KLA-Tencor Corp. (United States)
Larry S. Zurbrick, KLA-Tencor Corp. (United States)
Chris A. Mack, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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