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Proceedings Paper

The judgment criteria of halftone pinhole defects
Author(s): Kyong Mun Shin; Dae-Woo Kim; Jung-Kwan Lee; Dong-Hyuk Lee; Jin-Min Kim; Sang-Soo Choi
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Paper Abstract

As the design rule of the semiconductor devices approaches to 90nm node technology, the defect controllability of the photomask becomes critical success factor. The halftone defects generated in photomask cannot be easily judged because the results of Aerial Image Measurement System (AIMS) are flexible with the defect size and transmission. Also, the printability of halftone defect on wafer is not clear because of low sensitivity of inspection system for pinholes. In this paper, halftone defects with programmed size were fabricated by Focused Ion Beam (FIB) repair tool. We evaluated the transmission correlation of the halftone defects between printability with 248nm simulation tool and inspection machine with 365nm light source. We could make the judgment criteria of halftone defects captured by inspection machine without AIMS result from this correlation result. Inspection machines such as KLA-Tencor and Lasertec are used to verify the detectability of halftone defects. Wafer printability was simulated using AIMS fab 248. Even though the transmission of halftone defects is same, the energy intensity of large size defects is higher than that of small size.

Paper Details

Date Published: 20 August 2004
PDF: 12 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557728
Show Author Affiliations
Kyong Mun Shin, Photronics PKL Co., Ltd. (South Korea)
Dae-Woo Kim, Photronics PKL Co., Ltd. (South Korea)
Jung-Kwan Lee, Photronics PKL Co., Ltd. (South Korea)
Dong-Hyuk Lee, Photronics PKL Co., Ltd. (South Korea)
Jin-Min Kim, Photronics PKL Co., Ltd. (South Korea)
Sang-Soo Choi, Photronics PKL Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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