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Proceedings Paper

Improvement of develop loading effect in the FEP-171 process
Author(s): Tae-Joong Ha; Young-Mo Lee; Bo Kyung Choi; Yongkyoo Choi; Oscar Han
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Paper Abstract

CD control of FEP-171 is difficult due to abnormal CD variation in single puddle development. Fogging analysis patterns show that space CD in large open region is smaller than that in small open region. That is caused by develop loading effect, which is largely affected by developer dispensing condition in single puddle method. Double puddle development improves the abnormal CD trend and has a good CD uniformity (3sigma 5.4nm). Contrary to FEP-171, abnormal CD trend is not observed in UV-82(CAR). The low dissolution rate of FEP-171 is the cause of the abnormal CD trend. The yield of CD uniformity and MTT increases with applying double puddle method to FEP-171 process.

Paper Details

Date Published: 20 August 2004
PDF: 10 pages
Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); doi: 10.1117/12.557709
Show Author Affiliations
Tae-Joong Ha, Hynix Semiconductor Inc. (South Korea)
Young-Mo Lee, Hynix Semiconductor Inc. (South Korea)
Bo Kyung Choi, Hynix Semiconductor Inc. (South Korea)
Yongkyoo Choi, Hynix Semiconductor Inc. (South Korea)
Oscar Han, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 5446:
Photomask and Next-Generation Lithography Mask Technology XI
Hiroyoshi Tanabe, Editor(s)

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