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Proceedings Paper

Very long wavelength (>15 µm) HgCdTe photodiodes by liquid phase epitaxy
Author(s): Marion B. Reine; Stephen P. Tobin; Peter W. Norton; Paul LoVecchio
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Paper Abstract

This paper reviews and assesses back-illuminated P-on-n photovoltaic HgCdTe detector technology, based on two-layer growth by Liquid Phase Epitaxy on CdZnTe substrates, for application at wavelengths beyond 15 μm in a new generation of spaceborne multispectral instruments for remote sensing. We review data that show feasibility of useful cutoff wavelengths as long as 18-19 μm. We recommend that that LPE photovoltaic HgCdTe technology be extended to the 20-25 μm wavelength region for single elements and small arrays for NASA remote-sensing applications.

Paper Details

Date Published: 22 October 2004
PDF: 11 pages
Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); doi: 10.1117/12.557317
Show Author Affiliations
Marion B. Reine, BAE Systems, Inc. (United States)
Stephen P. Tobin, BAE Systems, Inc. (United States)
Peter W. Norton, BAE Systems, Inc. (United States)
Paul LoVecchio, BAE Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 5564:
Infrared Detector Materials and Devices
Randolph E. Longshore; Sivalingam Sivananthan, Editor(s)

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