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Proceedings Paper

Ion beam synthesis of cobalt silicides in Si and SiGe
Author(s): G. G. Gumarov; V. Yu. Petukhov; V. A. Shustov; Oleg P. Pchelyakov; V. I. Mashanov; Il'dus B. Khaibullin
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Paper Abstract

Cobalt silicide layers were formed in Si and Si1-xGex/Si heterostructures by using ion beam synthesis (IBS) at specified regimes and conditions. Effect of the type of the initial target and its temperature during implantation on the phase composition and structure of synthesized layers were investigated. The nonmonotonic dependence of the sheet resistance of synthesized films on ion current density was detected. Thin CoSi2 films on Si0.6Ge0.4 structures with the sheet resistance of 17 Ohm/ were obtained using IBS with subsequent rapid thermal annealing.

Paper Details

Date Published: 28 May 2004
PDF: 6 pages
Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.557272
Show Author Affiliations
G. G. Gumarov, Kazan Physical-Technical Institute (Russia)
V. Yu. Petukhov, Kazan Physical-Technical Institute (Russia)
V. A. Shustov, Kazan Physical-Technical Institute (Russia)
Oleg P. Pchelyakov, Institute of Semiconductor Physics (Russia)
V. I. Mashanov, Institute of Semiconductor Physics (Russia)
Il'dus B. Khaibullin, Kazan Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5401:
Micro- and Nanoelectronics 2003
Kamil A. Valiev; Alexander A. Orlikovsky, Editor(s)

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