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Proceedings Paper

Kinetic redundancy in dye-sensitized solar cells: the use of high-bandgap metal oxide barrier layers
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Paper Abstract

Control of charge interfacial charge transfer is central to the design of photovoltaic devices. A an elegant approach to control those dynamics, is the use of an insulating metal oxide blocking layer at a nanocrystalline inorganic / organic semiconductor interface. We show that the conformal growth of a ~1 nm thick overlayer of MgO on a preformed nanocrystalline SnO2 film results in a ~4-fold retardation in the rate of charge recombination at such an interface This observation shows a good correlation with the current/voltage characteristics of dye sensitised nanocrystalline solar cells fabricated from such films, with the MgO coating resulting in ~ 50% improvement in overall device efficiency.

Paper Details

Date Published: 3 November 2004
PDF: 6 pages
Proc. SPIE 5520, Organic Photovoltaics V, (3 November 2004);
Show Author Affiliations
Emilio Palomares, Imperial College London (United Kingdom)
Alex Green, Imperial College London (United Kingdom)
Saif A. Haque, Imperial College London (United Kingdom)
James R. Durrant, Imperial College London (United Kingdom)

Published in SPIE Proceedings Vol. 5520:
Organic Photovoltaics V
Zakya H. Kafafi; Paul A. Lane, Editor(s)

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