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Proceedings Paper

Photodetectors on the base of ZnO thin films
Author(s): Natella R. Aghamalyan; Ruben K. Hovsepyan; Armen R. Poghosyan; Vahe G. Lazaryan
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Paper Abstract

ZnO thin film is the perspective material for using as active layer in solid-state UV photodetectors. Here we present our investigations of photoelectric properties of the developed photosensitive field-effect transistor. Pure and lithium doped ZnO films were produced by vacuum electron-beam deposition method. Field effect was studied in Li doped ZnO films having high resistivity and in heterostructures consisting of three ZnO layers doped by 1, 5 and 10 at% of Li impurity accordingly. The photoelectric characteristics were measured (currents ratio, charge carriers mobility, ampere-watt sensitivity in UV diapason, NEP sensitivity, and photocurrent kinetics). The open and close current ratio was 106 and the field-effect mobility was ~10 cm2/Vsec. We have also studied the low-frequency noises (0.001÷100 kHz) of UV photodetector and suggested the methods of noise suppression. It was found that the dark current noises and photocurrent noises have different mechanisms.

Paper Details

Date Published: 22 October 2004
PDF: 6 pages
Proc. SPIE 5560, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X, (22 October 2004); doi: 10.1117/12.556790
Show Author Affiliations
Natella R. Aghamalyan, Institute for Physical Research (Armenia)
Ruben K. Hovsepyan, Institute for Physical Research (Armenia)
Armen R. Poghosyan, Institute for Physical Research (Armenia)
Vahe G. Lazaryan, Institute for Physical Research (Armenia)

Published in SPIE Proceedings Vol. 5560:
Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X
Francis T. S. Yu; Ruyan Guo; Shizhuo Yin, Editor(s)

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