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Proceedings Paper

EUV microlithography: a challenge for optical metrology
Author(s): Gunther Seitz; Stefan Schulte; Udo Dinger; Oliver Hocky; Bernhard Fellner; Markus Rupp
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Paper Abstract

EUVL (extreme ultraviolet lithography), utilizing an actinic wavelength of about 13 nm , appears to be the most promising technology approach to reach the 30 nm node. Calling for diffraction limited imaging performance, EUV demand unprecedented requirements for figure metrology and fabrication technology. This paper gives an overview over problems rising from the interferometric measurement of aspheric EUV mirrors.

Paper Details

Date Published: 18 October 2004
PDF: 7 pages
Proc. SPIE 5533, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II, (18 October 2004); doi: 10.1117/12.556317
Show Author Affiliations
Gunther Seitz, Carl Zeiss SMT AG (Germany)
Stefan Schulte, Carl Zeiss SMT AG (Germany)
Udo Dinger, Carl Zeiss SMT AG (Germany)
Oliver Hocky, Carl Zeiss SMT AG (Germany)
Bernhard Fellner, Carl Zeiss SMT AG (Germany)
Markus Rupp, Carl Zeiss SMT AG (Germany)


Published in SPIE Proceedings Vol. 5533:
Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II
Ali M. Khounsary; Udo Dinger; Kazuya Ota, Editor(s)

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