A compact electron-based extreme ultraviolet (EUV) source for advanced at-wavelength mirror metrology is developed. The source concept is based on the transfer of advanced microfocus x-ray tube technology into the EUV spectral range. This allows the realization of a flexible, debris-free, and long-term stable EUV source. In the EUV tube, silicon targets are used to generate radiation at 13.5 nm. Detailed characteristics of the source performance are reported and different applications of the EUV tube in the field of at-wavelength mirror metrology are presented.

Date Published: 18 October 2004
PDF: 9 pages
Proc. SPIE 5533, Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II, (18 October 2004); doi: 10.1117/12.554892

Published in SPIE Proceedings Vol. 5533:
Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications II
Ali M. Khounsary; Udo Dinger; Kazuya Ota, Editor(s)