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Proceedings Paper

Key challenges in across-pitch 0.33-k1 trench patterning using hybrid mask
Author(s): Navab Singh; Moitreyee Mukherjee-Roy; Sohan S. Mehta; Hideki Suda; Takao Kubota; Yasuki Kimura; Hiroshi Kinoshita
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Paper Abstract

This paper studies the concept of and challenges in patterning trenches using hybrid phase shift mask. Our hybrid mask consists of alternating, chrome-less and 20% attenuated phase shift features on the same reticle. Using this mask, we could pattern across-pitch 120 nm trenches on 0.68-NA, KrF lithography scanner, which is equivalent to K1 of 0.33. However, many challenging issues like unequal best focus for different duty ratios of the same technique and same duty ratio of different techniques, variation in the dose requirements despite aerial image CD matching and the pitch dependent variation in the critical dimension imbalance of the zero and π phased trenches are observed. These issues, that are question marks on the viability of hybrid mask, are presented in this paper. Hybrid mask manufacturing and characterization data is also included to justify that the issues are not because of the mask manufacturing process.

Paper Details

Date Published: 28 May 2004
PDF: 8 pages
Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.547729
Show Author Affiliations
Navab Singh, Institute of Microelectronics (Singapore)
Moitreyee Mukherjee-Roy, Institute of Microelectronics (Singapore)
Sohan S. Mehta, Institute of Microelectronics (Singapore)
Hideki Suda, HOYA Corp. (Japan)
Takao Kubota, HOYA Corp. (Japan)
Yasuki Kimura, HOYA Corp. (Japan)
Hiroshi Kinoshita, HOYA Corp. (Japan)

Published in SPIE Proceedings Vol. 5377:
Optical Microlithography XVII
Bruce W. Smith, Editor(s)

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