
Proceedings Paper
Modeling of the noise behavior of graded bandgap channel MOSFET at GHz frequenciesFormat | Member Price | Non-Member Price |
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Paper Abstract
A novel graded band gap channel Si-SiGe MOSFET structure has been suggested and its characteristics has been
investigated. The investigations indicated that the suggested structure reduces the short-channel effects, increases the cutoff
frequency, and hence makes it usage at high frequency and Low noise applications prefeable. To show the superior
performance of the suggested structure at GHz frequencies, and as an example, the noise behavior of the structure is
thoroughly investigated. First the device noise model parameters are calculated from D.C. and A.C. characteristics. The
extracted noise model parameters are then used to determine the minimum noise figure and minimum noise temperature
at GHz frequencies. The effects of the different device parameters on the noise performance are determined. Finally, the
results are compared with those of conventional MOSFET structure to show the superior performance of graded band
gap Si-SiGe MOSFETs at these frequency ranges.
Paper Details
Date Published: 25 May 2004
PDF: 10 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547339
Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)
PDF: 10 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.547339
Show Author Affiliations
Ali Abou-Elnour, Ajman Univ. of Science and Technology (United Arab Emirates)
Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)
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