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Proceedings Paper

Dependence of Hooge constant on mean free paths of materials
Author(s): Munecazu Tacano; Jan Pavelka; Nobuhisa Tanuma; Saburo Yokokura; Sumihisa Hashiguchi
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Paper Abstract

The Hooge parameters of compound semiconductors are found to be in inverse proportional to the mean free paths of materials. The newly developed model of 1/f phonon energy partition fluctuation in thermal equilibrium predicts the value of Hooge parameter as αH = a/λ, the ratio of the lattice constant a and the mean free path λ. Several reported experimental results on αH for very pure semiconductors are found on the a/λ line. Experimental verification is given by measuring noise in InGaAs/InAlAs heterostructure, where optical phonon effects can be observed due to negligible impurity scattering. The Hooge parameter of about 1 in p-InGaAs and 10-3 to 10-5 in n-InGaAs reflects the two order difference in the mobility and corresponding λ values.

Paper Details

Date Published: 25 May 2004
PDF: 10 pages
Proc. SPIE 5469, Fluctuations and Noise in Materials, (25 May 2004); doi: 10.1117/12.547202
Show Author Affiliations
Munecazu Tacano, Meisei Univ. (Japan)
Jan Pavelka, Meisei Univ. (Japan)
Nobuhisa Tanuma, Meisei Univ. (Japan)
Saburo Yokokura, Meisei Univ. (Japan)
Sumihisa Hashiguchi, Univ. of Yamanashi (Japan)

Published in SPIE Proceedings Vol. 5469:
Fluctuations and Noise in Materials
Dragana Popovic; Michael B. Weissman; Zoltan A. Racz, Editor(s)

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