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Proceedings Paper

Comparing ablation induced by fs, ps, and ns XUV-laser pulses
Author(s): Michal Bittner; Libor Juha; Dagmar Chvostova; Vit Letal; Josef Krasa; Zdenek Otcenasek; Michaela Kozlova; Jiri Polan; Ansgar R. Praeg; Bedrich Rus; Michal Stupka; Jacek Krzywinski; Andrzej Andrejczuk; Jerzy B. Pelka; Ryszard Sobierajski; Josef Feldhaus; Frederick P. Boody; Michael Eric Grisham; Georgiy O. Vaschenko; Carmen S. Menoni; Jorge J. Rocca
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Paper Abstract

Ablation thresholds, etch rates, and quality of ablated structures often differ dramatically if a conventional, UV-Vis-IR laser delivers radiation energy onto a material surface in a short (nanosecond) or ultra-short (picosecond/femtosecond) pulses. Various short-wavelength (λ < 100 nm) lasers emitting pulses with durations ranging from ~ 10 fs to ~ 1 ns have recently been put into a routine operation. This makes possible to investigate how the ablation characteristics depends on the pulse duration in the XUV spectral region. 1.2-ns pulses of 46.9-nm radiation delivered from a capillary-discharge Ne-like Ar laser, focused by a spherical Sc/Si multilayer-coated mirror were used for an ablation of organic polymers and silicon. Various materials were irradiated with an ellipsoidal-mirror-focused XUV radiation (λ = 86 nm, τ = 30-100 fs) generated by the free-electron laser (FEL) operated at the TESLA Test Facility (TTF1 FEL) in Hamburg. The beam of the Ne-like Zn XUV laser (λ = 21.2 nm, τ < 100 ps) driven by the Prague Asterix Laser System (PALS) was also successfully focused by a spherical Si/Mo multilayer-coated mirror to ablate various materials. Based on the results of the experiment the etch rates for three different pulse durations are compared using the XUV-ABLATOR code to compensate for the wavelength difference. Comparing the values of etch rates calculated for short pulses with the measured ones for ultrashort pulses we may study the influence of pulse duration on the XUV ablation efficiency.

Paper Details

Date Published: 20 September 2004
PDF: 10 pages
Proc. SPIE 5448, High-Power Laser Ablation V, (20 September 2004); doi: 10.1117/12.547086
Show Author Affiliations
Michal Bittner, Charles Univ. in Prague (Czech Republic)
Institute of Physics (Czech Republic)
Libor Juha, Institute of Physics (Czech Republic)
Deutsches Elektronen Synchrotron (Germany)
Dagmar Chvostova, Institute of Physics (Czech Republic)
Vit Letal, Czech Technical University in Prague (Czech Republic)
Josef Krasa, Institute of Physics (Czech Republic)
Zdenek Otcenasek, Institute of Physics (Czech Republic)
Czech Technical Univ. in Prague (Czech Republic)
Michaela Kozlova, Institute of Physics (Czech Republic)
Jiri Polan, Institute of Physics (Czech Republic)
Ansgar R. Praeg, Institute of Physics (Czech Republic)
Bedrich Rus, Institute of Physics (Czech Republic)
Michal Stupka, Institute of Physics (Czech Republic)
Jacek Krzywinski, Deutsches Elektronen Synchrotron (Germany)
Institute of Physics (Poland)
Andrzej Andrejczuk, Deutsches Elektronen Synchrotron (Germany)
Univ. of Bialystok (Poland)
Jerzy B. Pelka, Deutsches Elektronen Synchrotron (Germany)
Institute of Physics (Poland)
Ryszard Sobierajski, Warsaw University of Technology (Poland)
Josef Feldhaus, Deutsches Elektronen Synchrotron (Germany)
Frederick P. Boody, Ion Light Technologies GmbH (Germany)
Michael Eric Grisham, Colorado State Univ. (United States)
Georgiy O. Vaschenko, Colorado State Univ. (United States)
Carmen S. Menoni, Colorado State Univ. (United States)
Jorge J. Rocca, Colorado State Univ. (United States)

Published in SPIE Proceedings Vol. 5448:
High-Power Laser Ablation V
Claude R. Phipps, Editor(s)

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