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Proceedings Paper

Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs
Author(s): Nataliya R Lukyanchikova; N. Garbar; A. Smolanka; Eddy R. Simoen; A. Mercha; Cor Claeys
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Paper Abstract

In this paper, some new front-back coupling noise effects are described. They have been revealed in partially-depleted SOI MOSFETs under conditions where an accumulating voltage is applied to the back gate. The first effect consists in the appearance of a Lorentzian component in the noise spectra of the front channel current. The time constant for such Lorentzians which are observed in weak and strong inversion decreases with increasing amplitude of the back-gate voltage and is independent of the front-gate voltage. The second effect is the decrease of the amplitude and the turn-over frequency of the LKE noise Lorentzians that are present in the noise spectra due to the EVB tunneling currents. It is shown that the Lorentzians generated under conditions of an accumulating back-gate voltage and the LKE Lorentzians are analogous by their nature. A model is considered whereby the source of the Lorentzians entering the noise spectra in the presence of an accumulating back-gate voltage is the Nyquist noise voltage generated across the p+-n+ junction induced by the back-gate voltage at the source/back gate. The capacitive character of the source-body impedance is the reason for the Lorentzian shape of the noise component generated by those Nyquist fluctuations

Paper Details

Date Published: 25 May 2004
PDF: 7 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546971
Show Author Affiliations
Nataliya R Lukyanchikova, Institute of Semiconductor Physics (Ukraine)
N. Garbar, Institute of Semiconductor Physics (Ukraine)
A. Smolanka, Institute of Semiconductor Physics (Ukraine)
Eddy R. Simoen, IMEC (Belgium)
A. Mercha, IMEC (Belgium)
Cor Claeys, IMEC (Belgium)

Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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