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Proceedings Paper

Reducing measurement uncertainty drives the use of multiple technologies for supporting metrology
Author(s): Bill Banke Jr.; Charles N. Archie; Matthew Sendelbach; Jim Robert; James A. Slinkman; Phil Kaszuba; Rick Kontra; Mick DeVries; Eric P. Solecky
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Paper Abstract

Perhaps never before in semiconductor microlithography has there been such an interest in the accuracy of measurement. This interest places new demands on our in-line metrology systems as well as the supporting metrology for verification. This also puts a burden on the users and suppliers of new measurement tools, which both challenge and complement existing manufacturing metrology. The metrology community needs to respond to these challenges by using new methods to assess the fab metrologies. An important part of this assessment process is the ability to obtain accepted reference measurements as a way of determining the accuracy and Total Measurement Uncertainty (TMU) of an in-line critical dimension (CD). In this paper, CD can mean any critical dimension including, for example, such measures as feature height or sidewall angle. This paper describes the trade-offs of in-line metrology systems as well as the limitations of Reference Measurement Systems (RMS). Many factors influence each application such as feature shape, material properties, proximity, sampling, and critical dimension. These factors, along with the metrology probe size, interaction volume, and probe type such as e-beam, optical beam, and mechanical probe, are considered. As the size of features shrinks below 100nm some of the stalwarts of reference metrology come into question, such as the electrically determined transistor gate length. The concept of the RMS is expanded to show how multiple metrologies are needed to achieve the right balance of accuracy and sampling. This is also demonstrated for manufacturing metrology. Various comparisons of CDSEM, scatterometry, AFM, cross section SEM, electrically determined CDs, and TEM are shown. An example is given which demonstrates the importance in obtaining TMU by balancing accuracy and precision for selecting manufacturing measurement strategy and optimizing manufacturing metrology. It is also demonstrated how the necessary supporting metrology will bring together formerly unlinked technology fields requiring new measurement science. The emphasis on accuracy will increase the importance and role of NIST and similar metrology organizations in supporting the semiconductor industry in this effort.

Paper Details

Date Published: 24 May 2004
PDF: 18 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.546880
Show Author Affiliations
Bill Banke Jr., IBM Corp. (United States)
Charles N. Archie, IBM Corp. (United States)
Matthew Sendelbach, IBM Corp. (United States)
Jim Robert, IBM Corp. (United States)
James A. Slinkman, IBM Corp. (United States)
Phil Kaszuba, IBM Corp. (United States)
Rick Kontra, IBM Corp. (United States)
Mick DeVries, IBM Corp. (United States)
Eric P. Solecky, IBM Microelectronics Division (United States)


Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)

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