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Proceedings Paper

Noise in Schottky-barrier diodes: from static- to large-signal operation
Author(s): Susana Perez; Pavel Shiktorov; Tomás González; Evjeni Starikov; Viktor Gruzinskis; Lino Reggiani; Luca Varani; J. C. Vaissiere
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Paper Abstract

We report Monte Carlo particle (MCP) simulations of the current response and noise spectrum in heavily doped nanometric GaAs Schottky-barrier diodes (SBDs) operating under static, cyclostationary and resonant-circuit conditions in the forward bias region. Main attention is paid to the SBDs application in the THz frequency region. General features of the regular response and noise as well as their modifications under various operation modes are obtained from MCP simulations and analyzed in the framework of a simple analytical model based on the static I-V and C-V relations obtained from simulations.

Paper Details

Date Published: 25 May 2004
PDF: 15 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.546666
Show Author Affiliations
Susana Perez, Univ. de Salamanca (Spain)
Pavel Shiktorov, Semiconductor Physics Institute (Lithuania)
Tomás González, Univ. de Salamanca (Spain)
Evjeni Starikov, Semiconductor Physics Institute (Lithuania)
Viktor Gruzinskis, Semiconductor Physics Institute (Lithuania)
Lino Reggiani, Univ. degli Studi di Lecce (Italy)
Luca Varani, Univ. Montpellier II (France)
J. C. Vaissiere, Univ. Montpellier II (France)

Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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