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Proceedings Paper

Tunneling regenerated high-power dual-wavelength laser diodes
Author(s): Wei Ling Guo; Guang Di Shen; Jian Jun Li; Ting Wang; Guo Gao; Deshu Zou
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Paper Abstract

A Novel structure of high power dual-wavelength semiconductor laser diode is proposed and fabricated. Two laser structures are cascaded by a high doping tunnel junction during the epitaxial growth. The lasers can emit at wavelength of 951nm and 987nm at the same time. Without facet coating, the output power of the dual-wavelength laser is as high as 3.1W at 3A. And the slope efficiency of these devices is about 1.21A/W. Much higher output power can be reached for those dual-wavelength lasers when modifying the structure. The external differential quantum efficiency of different cavity length devices is analyzed.

Paper Details

Date Published: 1 September 2004
PDF: 5 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545944
Show Author Affiliations
Wei Ling Guo, Beijing Univ. of Technology (China)
Guang Di Shen, Beijing Univ. of Technology (China)
Jian Jun Li, Beijing Univ. of Technology (China)
Ting Wang, Beijing Univ. of Technology (China)
Guo Gao, Beijing Univ. of Technology (China)
Deshu Zou, Beijing Univ. of Technology (China)

Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

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