Share Email Print

Proceedings Paper

Polarimetric analysis of a semiconductor optical amplifier based on the Mueller-Stokes formalism
Author(s): Florian F.L. Bentivegna; Frederic Boulvert; Mikael Guegan; Bruno Boulbry; Ammar Sharaiha; Mohamad Tariaki; Fabrice Pellen; Bernard Le Jeune; Yann G. Boucher
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Semiconductor Optical Amplifiers (SOAs) are of central interest as multifunctional, easy-to-integrate components for the development of future optoelectronic systems. Their dependence upon the incoming light polarization is a well-known, but still debated, issue in the context of emerging optical telecommunication networks, fueling the need for a detailed polarimetric characterization of such structures. In this paper, we present what we believe to be the first systematic polarimetric analysis within the frame of the Mueller-Stokes formalism of an integrated InP/InGaAsP SOA around 1550 nm. The challenge stems from the amplifying, active, spectrally broadband and nonlinear nature of the component. For the sake of our study, we have developed a highly sensitive, free-space, polarimetric set-up, with the additional experimental challenge induced by the spatial constraints of a guided-wave device, most notably in terms of light injection. Physical phenomena (intrinsic noise contribution of internal sources, carrier saturation due in particular to Amplified Spontaneous Emission, modal birefringence for index and gain...) responsible for the polarization dependence of the amplification process are identified, and discussion of the data highlights the need for an extended matrix formalism taking explicitly internal sources into account.

Paper Details

Date Published: 1 September 2004
PDF: 12 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545567
Show Author Affiliations
Florian F.L. Bentivegna, Ecole Nationale d'Ingenieurs de Brest (France)
Frederic Boulvert, Univ. de Bretagne Occidentale (France)
Mikael Guegan, Ecole Nationale d'Ingenieurs de Brest (France)
Bruno Boulbry, Univ. de Bretagne Occidentale (France)
Ammar Sharaiha, Ecole Nationale d'Ingenieurs de Brest (France)
Mohamad Tariaki, Ecole Nationale d'Ingenieurs de Brest (France)
Fabrice Pellen, Ecole Nationale Superieure des Ingenieurs des Etudes et Techniques d'Armament (France)
Bernard Le Jeune, Univ. de Bretagne Occidentale (France)
Yann G. Boucher, Ecole Nationale d'Ingenieurs de Brest (France)

Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?