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Proceedings Paper

Self-seeded gain-switched operation of an InGaN MQW laser diode
Author(s): Youfang Hu; Michael Dubov; Igor Khrushchev
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Paper Abstract

Self-seeded, gain-switched operation of an InGaN multi-quantum-well laser diode has been demonstrated for the first time. An external cavity comprising Littrow geometry was implemented for spectral control of pulsed operation. The feedback was optimized by adjusting the external cavity length and the driving frequency of the laser. The generated pulses had a peak power in excess of 400mW, a pulse duration of 60ps, a spectral linewidth of 0.14nm and maximum side band suppression ratio of 20dB. It was tunable within the range of 3.6nm centered at a wavelength of 403nm.

Paper Details

Date Published: 1 September 2004
PDF: 3 pages
Proc. SPIE 5452, Semiconductor Lasers and Laser Dynamics, (1 September 2004); doi: 10.1117/12.545446
Show Author Affiliations
Youfang Hu, Aston Univ. (United Kingdom)
Michael Dubov, Aston Univ. (United Kingdom)
Igor Khrushchev, Aston Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 5452:
Semiconductor Lasers and Laser Dynamics
Daan Lenstra; Geert Morthier; Thomas Erneux; Markus Pessa, Editor(s)

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