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Proceedings Paper

Cross-correlation measurements in searching for a trace of the gate voltage noise in a JFET
Author(s): Sumihisa Hashiguchi; Shinsuke Hosono; Makoto Ohki; Munecazu Tacano; Josef Sikula
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Paper Abstract

The trace of the gate noise voltage was successfully caught by the measurements of the correlation between the noise outputs of a pair of JFETs connected to a common gate resistor. It is shown for 2SK150 (n-channel junction FET) that the gate noise voltage is 1/f-type and its level is -142dbV2/Hz at 1Hz, and that the correlation coefficient between the gate noise voltage and the gate noise current is -1.

Paper Details

Date Published: 25 May 2004
PDF: 9 pages
Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); doi: 10.1117/12.545328
Show Author Affiliations
Sumihisa Hashiguchi, Univ. of Yamanashi (Japan)
Shinsuke Hosono, Koito Industries, Ltd. (Japan)
Makoto Ohki, Univ. of Yamanashi (Japan)
Munecazu Tacano, Meisei Univ. (Japan)
Josef Sikula, Brno Univ. of Technology (Czech Republic)

Published in SPIE Proceedings Vol. 5470:
Noise in Devices and Circuits II
Francois Danneville; Fabrizio Bonani; M. Jamal Deen; Michael E. Levinshtein, Editor(s)

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