CD SEM’s used for CD Metrology in semiconductor fabs rely upon secondary electron emission to indirectly image features on process wafers. The use of secondary electrons by current CD SEM technology limits the resolution of this metrology and hinders its ability to meet future requirements. An idea that has garnered some interest from both the research and commercial sectors is to use backscattered, or primary, electrons with very low energy losses to image patterned features directly. Such a device would operate with acceleration (and landing) potentials in the range of 50 keV-200 keV. One concern is whether the high energy incident electrons will damage active devices. It has been hypothesized that the substrate’s reduced stopping power for high energy electrons will result in the majority of the electron energy being deposited far below the device structures. We have explored the issue of device damage from high energy and high dose incident electrons and find that this technique results in unacceptable transistor degradation at all of the doses and landing energies explored. We present our findings in this paper.

Date Published: 24 May 2004
PDF: 7 pages
Proc. SPIE 5375, Metrology, Inspection, and Process Control for Microlithography XVIII, (24 May 2004); doi: 10.1117/12.544232

Published in SPIE Proceedings Vol. 5375:
Metrology, Inspection, and Process Control for Microlithography XVIII
Richard M. Silver, Editor(s)